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| HE8404SG GaAlAs Infrared Emitting Diode ODE-208-997B (Z) Rev.2 Mar. 2005 Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features * High efficiency and high output power Package Type * HE8404SG: SG1 Internal Circuit 1 2 HE8404SG Absolute Maximum Ratings (TC = 25C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3 -20 to +60 -40 to +90 Unit mA V C C Optical and Electrical Characteristics (TC = 25C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbol PO p VF IR Ct tr tf Min 40 790 -- -- -- -- -- -- Typ -- 820 50 -- -- 30 10 10 Max -- 850 60 2.5 100 -- -- -- Unit mW nm nm V A pF ns ns Test Conditions IF = 200 mA IF = 200 mA IF = 200 mA IF = 200 mA VR = 3 V VR = 0 V, f = 1 MHz IF = 50 mA IF = 50 mA Rev.2, Mar. 2005, page 2 of 6 HE8404SG Typical Characteristic Curves Optical Output Power vs. Forward Current 60 Optical output power, PO (mW) Forward current, IF (mA) Forward Current vs. Forward Voltage 250 200 150 TC = -20C 100 50 0 25C 60C 50 40 30 20 10 0 0 50 100 150 200 250 Forward current, IF (mA) TC = -20C 0C 25C 40C 60C 0 0.5 1.0 1.5 2.0 2.5 Forward voltage, VF (V) Wavelength Distribution Relative radiation intensity (%) Pulse Response Current pulse TC = 25C Relative intensity 100 80 60 40 20 0 TC = 25C Optical pulse -40 -20 p 20 Wavelength, (nm) 40 20 ns/div Rev.2, Mar. 2005, page 3 of 6 HE8404SG Typical Characteristic Curves (cont) Radiation Pattern 0 30 TC = 25C 80 60 40 20 90 100 80 60 40 20 0 20 40 60 80 Relative radiation intensity (%) Angle, (deg.) 0 100 60 Rev.2, Mar. 2005, page 4 of 6 Relative radiation intensity (%) An gle , (d eg .) HE8404SG Package Dimensions As of July, 2002 Unit: mm 0.65 0.2 0.55 0.2 (2 - 1.05) OPJ Code JEDEC JEITA Mass (reference value) 5.4 0.2 4.65 0.2 4.0 0.2 2 0.45 0.1 1 2.54 0.35 2 0. 2 0 1. 45 5 14 2 2.7 0.2 1. 0 2 0. IR/SG1 -- -- 0.25 g Rev.2, Mar. 2005, page 5 of 6 HE8404SG Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage due to operation of the OPJ product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from OPJ. 7. Contact our sales office for any questions regarding this document or OPJ products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical experiments, when you handle the product. When disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ unless otherwise specified. Sales Offices Device Business Unit Opnext Japan, Inc. 190 Kashiwagi, Komoro-shi, Nagano 384-8511, Japan Tel: (0267) 22-4111 Japan (Japanese) Other area (English) For the detail of Opnext, Inc., see the following homepage: http://www.opnext.com/jp/products/ http://www.opnext.com/products/ (c)2005 Opnext Japan, Inc., All rights reserved. Printed in Japan. Colophon 1.0 Rev.2, Mar. 2005, page 6 of 6 |
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